Samsung says 256-layer NAND memory possible with double-stack tech

Seoul, Dec 1 : Samsung Electronics is planning to use a double-stack technology to develop its next-generation V-NAND flash memory, industry officials said on Tuesday, as the world’s largest memory chip producer tries to further cement its leading position in the sector.
At its investors’ forum, Samsung revealed that it will apply “extreme two-stack” technology for its future NAND flash chip and that it is possible to develop a 256-layer device.
“Our sixth-generation V-NAND features up to 128 layers with single stack technology, but if we apply a double-stack technology, a 256-layer stacking is mathematically possible,” said Han Jin-man, a senior vice president at Samsung’s memory business unit, at the forum.
A NAND flash is a type of non-volatile memory that stores data even if power is gone.
In today’s NAND flash production, a manufacturer’s technological prowess can be measured by the number of memory cell layers stacked in a device, as more layers mean better capacity with enhanced bit density, reports Yonhap news agency.
A double-stack method allows integration of more layers quickly compared to a single-stack solution but requires more advanced etching technology.